STMicroelectronics 1.2 kV 5 A Diode Schottky 2-Pin TO-220AC
- RS-stocknr.:
- 201-0873P
- Fabrikantnummer:
- STPSC5H12D
- Fabrikant:
- STMicroelectronics
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 201-0873P
- Fabrikantnummer:
- STPSC5H12D
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220AC | |
| Maximum Continuous Forward Current If | 5A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Series | STPSC | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 210A | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 15μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.4mm | |
| Length | 28.25mm | |
| Diameter | 3.75mm | |
| Standards/Approvals | No | |
| Width | 10mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-220AC | ||
Maximum Continuous Forward Current If 5A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Series STPSC | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 210A | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 15μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Maximum Operating Temperature 175°C | ||
Height 4.4mm | ||
Length 28.25mm | ||
Diameter 3.75mm | ||
Standards/Approvals No | ||
Width 10mm | ||
Automotive Standard No | ||
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultra high-performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its Its high forward surge capability.
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
Low VF
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