Microchip 150 V 35 A Diode 2-Pin D-5A 1N5806US
- RS-stocknr.:
- 333-160
- Fabrikantnummer:
- 1N5806US
- Fabrikant:
- Microchip
Subtotaal (1 doos van 48 eenheden)*
€ 436,512
(excl. BTW)
€ 528,192
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Nieuw product (vandaag reserveren)
- Verzending vanaf 09 februari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per Doos* |
|---|---|---|
| 48 + | € 9,094 | € 436,51 |
*prijsindicatie
- RS-stocknr.:
- 333-160
- Fabrikantnummer:
- 1N5806US
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | D-5A | |
| Maximum Continuous Forward Current If | 35A | |
| Peak Reverse Repetitive Voltage Vrrm | 150V | |
| Diode Configuration | Single | |
| Series | 1N5806 | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 175°C | |
| Peak Reverse Recovery Time trr | 25ns | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type D-5A | ||
Maximum Continuous Forward Current If 35A | ||
Peak Reverse Repetitive Voltage Vrrm 150V | ||
Diode Configuration Single | ||
Series 1N5806 | ||
Pin Count 2 | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 175°C | ||
Peak Reverse Recovery Time trr 25ns | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip Ultrafast Recovery rectifier diode series is military qualified and is ideal for high reliability applications where a failure cannot be tolerated. The industry recognized 2.5 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void less glass construction using an internal Category 1 metallurgical bond. These devices are available in both surface mount MELF and leaded package configurations.
Quadruple layer passivation
Extremely robust construction
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power capability
Inherently radiation hard as described in Microchip MicroNote 050
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