onsemi 1.2 kV 24 A Diode 3-Pin TO-247-3LD NDSH20120CDN
- RS-stocknr.:
- 218-672
- Fabrikantnummer:
- NDSH20120CDN
- Fabrikant:
- onsemi
Ontvang bulkkorting
Voeg 10 meer toe om € 8,70 te besparen
Bekijk bulkkortingSubtotaal (1 verpakking van 1 eenheid)*
€ 8,83
(excl. BTW)
€ 10,68
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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Verpakking(en) | Per verpakking | Bespaar |
|---|---|---|
| 1 - 9 | € 8,83 | - |
| 10 - 99 | € 7,96 | € 8,70 |
| 100 - 499 | € 7,33 | € 150,00 |
| 500 - 999 | € 6,80 | € 1.015,00 |
| 1000 + | € 6,11 | € 2.720,00 |
*prijsindicatie
- RS-stocknr.:
- 218-672
- Fabrikantnummer:
- NDSH20120CDN
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-3LD | |
| Maximum Continuous Forward Current If | 24A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Series | NDSH | |
| Diode Configuration | Dual Anode Common Cathode | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Forward Voltage Vf | 1.75V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 546A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-3LD | ||
Maximum Continuous Forward Current If 24A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Series NDSH | ||
Diode Configuration Dual Anode Common Cathode | ||
Pin Count 3 | ||
Peak Reverse Current Ir 200μA | ||
Maximum Forward Voltage Vf 1.75V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 546A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
- Land van herkomst:
- CN
The ON Semiconductor Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
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