BGA5H1BN6E6327XTSA1 Infineon RF Amplifier Low Noise 18.1 dB, 6-Pin 2690 MHz TSNP

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RS-stocknr.:
258-0656
Fabrikantnummer:
BGA5H1BN6E6327XTSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

RF Amplifier

Operating Frequency

2690 MHz

Amplifier Type

Low Noise

Technology

Silicon Germanium

Gain

18.1dB

Package Type

TSNP

Minimum Supply Voltage

1.5V

Maximum Supply Voltage

3.6V

Pin Count

6

Minimum Operating Temperature

-40°C

P1dB - Compression Point

60mW

Third Order Intercept OIP3

-6dBm

Noise Figure

1.2dB

Maximum Operating Temperature

85°C

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

Series

BGA5H1BN6

The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function

increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.

Low current consumption of 8.5 mA

Multi-state control: Bypass- and high gain-Mode

Ultra small TSNP-6-10 leadless package

RF output internally matched to 50 Ohm

Low external component count

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