ROHM BM3G005MUV-LBE2 High Side, High Side Power Switch IC 46-Pin, VQFN046V8080
- RS-stocknr.:
- 646-596
- Fabrikantnummer:
- BM3G005MUV-LBE2
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 2 eenheden)*
€ 25,73
(excl. BTW)
€ 31,134
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- 1.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 8 | € 12,865 | € 25,73 |
| 10 + | € 12,485 | € 24,97 |
*prijsindicatie
- RS-stocknr.:
- 646-596
- Fabrikantnummer:
- BM3G005MUV-LBE2
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Power Switch Topology | High Side | |
| Product Type | Power Switch IC | |
| Power Switch Type | High Side | |
| Switch On Resistance RdsOn | 50mΩ | |
| Package Type | VQFN046V8080 | |
| Minimum Supply Voltage | 6.83V | |
| Maximum Supply Voltage | 650V | |
| Pin Count | 46 | |
| Maximum Operating Temperature | 105°C | |
| Minimum Operating Temperature | -40°C | |
| Operating Current | 2.2mA | |
| Standards/Approvals | No | |
| Length | 8mm | |
| Height | 1.0mm | |
| Series | BM3G005MUV-LB | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Power Switch Topology High Side | ||
Product Type Power Switch IC | ||
Power Switch Type High Side | ||
Switch On Resistance RdsOn 50mΩ | ||
Package Type VQFN046V8080 | ||
Minimum Supply Voltage 6.83V | ||
Maximum Supply Voltage 650V | ||
Pin Count 46 | ||
Maximum Operating Temperature 105°C | ||
Minimum Operating Temperature -40°C | ||
Operating Current 2.2mA | ||
Standards/Approvals No | ||
Length 8mm | ||
Height 1.0mm | ||
Series BM3G005MUV-LB | ||
Automotive Standard No | ||
The ROHM GaN HEMT Power Stage is a high-performance product designed for the industrial equipment market, providing an optimal solution for electronics systems that require high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver into ROHM’s original package, the product significantly reduces parasitic inductance caused by PCB and wire bonding, compared to traditional discrete solutions. This innovation enables a high switching slew rate of up to 150V/ns, making it the ideal choice for applications demanding fast switching and superior efficiency.
Low VDD Quiescent and Operating Current
Low Propagation Delay
High dv/dt Immunity
Adjustable Gate Drive Strength
Power Good Signal Output
VDD UVLO Protection
Thermal Shutdown Protection
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