Infineon 650 V TRENCHSTOP™ IGBT 7 T7 evaluation board for 7th Generation of TRENCHSTOPTM IGBT for Energy Storage, EV
- RS-stocknr.:
- 232-5733
- Fabrikantnummer:
- EVALM5IGBT7TOBO1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 595,35
(excl. BTW)
€ 720,37
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Beperkte voorraad
- 2 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 595,35 |
*prijsindicatie
- RS-stocknr.:
- 232-5733
- Fabrikantnummer:
- EVALM5IGBT7TOBO1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| For Use With | Energy Storage, EV Charger, GPD, Industrial Drives, Industrial Power, Power Supplies, Solar Energy Systems | |
| Kit Classification | Evaluation Board | |
| Featured Device | 7th Generation of TRENCHSTOPTM IGBT | |
| Kit Name | 650 V TRENCHSTOP™ IGBT 7 T7 evaluation board | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
For Use With Energy Storage, EV Charger, GPD, Industrial Drives, Industrial Power, Power Supplies, Solar Energy Systems | ||
Kit Classification Evaluation Board | ||
Featured Device 7th Generation of TRENCHSTOPTM IGBT | ||
Kit Name 650 V TRENCHSTOP™ IGBT 7 T7 evaluation board | ||
- Land van herkomst:
- CN
The Infineon's evaluation board was developed to support customers during their first steps designing applications with the TRENCHSTOP™ IGBT7 in discrete packages, such as the IKW40N65ET7 or IKW40N120CS7, and EiceDRIVER™ 1200 V isolated gate driver 1EDI20H12AH. The assembled discrete has a rated blocking voltage of up to 1200 V and the board supports all TRENCHSTOP™ IGBT7 in 3pin and 4pin TO247 packages.
Low inductive design
Overload and short-circuit hardware protection
Over temperature hardware protection
Rugged gate driver technology with stability against transient and negative voltage
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