Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

RS-stocknr.:: 822-2532P
Fabrikantnummer:: DMG6602SVT-7
Fabrikant:: DiodesZetex

Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

76700 op voorraad - levertijd is 4 werkdag(en).

Prijs Per stuk (geleverd op een wiel) Hoeveelheden onder 150 op doorlopende strook

€ 0,248

(excl. BTW)

€ 0,30

(incl. BTW)

Aantal stuks	Per stuk
100 +	€ 0,248

RS-stocknr.:: 822-2532P
Fabrikantnummer:: DMG6602SVT-7
Fabrikant:: DiodesZetex

DMG6602SVT-7 Complementary Pair Enhancement MOSFET Data Sheet
ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	N, P
Maximum Continuous Drain Current	2.1 A, 3.4 A
Maximum Drain Source Voltage	30 V
Package Type	TSOT-26
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	100 mΩ, 140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3V
Maximum Power Dissipation	1.27 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Width	1.6mm
Typical Gate Charge @ Vgs	7 nC @ 10 V, 9 nC @ 10 V
Length	2.9mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.9mm

Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7

Dual N/P-Channel MOSFET, Diodes Inc.