P-Channel MOSFET, 15 A, 60 V, 3-Pin DPAK Renesas NP15P06SLG-E1-AY
- RS-stocknr.:
- 121-6891P
- Fabrikantnummer:
- NP15P06SLG-E1-AY
- Fabrikant:
- Renesas Electronics
Op voorraad - levertijd 3 à 5 werkdagen.
Toegevoegd
Prijs Per stuk (geleverd op een wiel) Quantities below 150 on continuous strip
€ 1,03
(excl. BTW)
€ 1,25
(incl. BTW)
| Aantal stuks | Per stuk |
| 50 - 90 | € 1,03 |
| 100 - 490 | € 0,90 |
| 500 - 990 | € 0,72 |
| 1000 + | € 0,60 |
- RS-stocknr.:
- 121-6891P
- Fabrikantnummer:
- NP15P06SLG-E1-AY
- Fabrikant:
- Renesas Electronics
Datasheets
Wetgeving en conformiteit
- Land van herkomst:
- MY
Productomschrijving
P-Channel MOSFET, Renesas Electronics (NEC)
MOSFET Transistors, Renesas Electronics (NEC)
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 15 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-252 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 95 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.5V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 30 W |
| Transistor Configuration | Single |
| Width | 6.1mm |
| Length | 6.5mm |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V |
| Height | 2.3mm |
| Forward Diode Voltage | 1.5V |