STMicroelectronics STGW39NC60VD IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 795-9209P
- Fabrikantnummer:
- STGW39NC60VD
- Fabrikant:
- STMicroelectronics
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Prijs Per stuk (geleverd in een tube)
€ 4,34
(excl. BTW)
€ 5,25
(incl. BTW)
Aantal stuks | Per stuk |
|---|---|
| 10 - 98 | € 4,34 |
| 100 - 498 | € 3,475 |
| 500 - 998 | € 3,09 |
| 1000 + | € 2,615 |
- RS-stocknr.:
- 795-9209P
- Fabrikantnummer:
- STGW39NC60VD
- Fabrikant:
- STMicroelectronics
Wetgeving en conformiteit
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 80 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 250 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |