STMicroelectronics STGD18N40LZT4, Type N-Channel IGBT, 30 A 390 V, 3-Pin TO-252, Surface
- RS-stocknr.:
- 795-9019
- Fabrikantnummer:
- STGD18N40LZT4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 6,54
(excl. BTW)
€ 7,915
(incl. BTW)
Voeg 70 eenheden toe voor gratis bezorging
Tijdelijk niet op voorraad
- Verzending 2.470 stuk(s) vanaf 25 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 20 | € 1,308 | € 6,54 |
| 25 - 45 | € 1,24 | € 6,20 |
| 50 - 120 | € 1,116 | € 5,58 |
| 125 - 245 | € 1,004 | € 5,02 |
| 250 + | € 0,956 | € 4,78 |
*prijsindicatie
- RS-stocknr.:
- 795-9019
- Fabrikantnummer:
- STGD18N40LZT4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 390V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 16 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC Q101 | |
| Length | 6.6mm | |
| Series | STGD18N40LZ | |
| Height | 2.4mm | |
| Width | 6.2 mm | |
| Automotive Standard | AEC-Q101 | |
| Energy Rating | 180mJ | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 390V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 16 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC Q101 | ||
Length 6.6mm | ||
Series STGD18N40LZ | ||
Height 2.4mm | ||
Width 6.2 mm | ||
Automotive Standard AEC-Q101 | ||
Energy Rating 180mJ | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Gerelateerde Links
- STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount
- STMicroelectronics STGD5H60DF IGBT, 10 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
- STMicroelectronics STGD5NB120SZT4 IGBT, 10 A 1200 V, 3-Pin DPAK (TO-252), Surface Mount
- STMicroelectronics STGB18N40LZT4 IGBT, 30 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount
- onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
- onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount
- onsemi FGD3440G2-F085 IGBT, 26.9 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
- onsemi FGD3040G2-F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount