STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252), Surface Mount
- RS-stocknr.:
- 795-9019
- Fabrikantnummer:
- STGD18N40LZT4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 6,54
(excl. BTW)
€ 7,915
(incl. BTW)
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 20 | € 1,308 | € 6,54 |
| 25 - 45 | € 1,24 | € 6,20 |
| 50 - 120 | € 1,116 | € 5,58 |
| 125 - 245 | € 1,004 | € 5,02 |
| 250 + | € 0,956 | € 4,78 |
*prijsindicatie
- RS-stocknr.:
- 795-9019
- Fabrikantnummer:
- STGD18N40LZT4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 420 V | |
| Maximum Gate Emitter Voltage | 16V | |
| Maximum Power Dissipation | 125 W | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 6.6 x 6.2 x 2.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 420 V | ||
Maximum Gate Emitter Voltage 16V | ||
Maximum Power Dissipation 125 W | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 6.6 x 6.2 x 2.4mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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