Infineon IGW75N60TFKSA1 IGBT, 150 A 600 V, 3-Pin TO-247, Through Hole

Bekijk alle IGBTs
Bulkkorting beschikbaar

Subtotaal (1 eenheid)*

€ 5,58

(excl. BTW)

€ 6,75

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 218 stuk(s) vanaf 22 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
1 - 9€ 5,58
10 - 24€ 4,80
25 - 49€ 4,47
50 - 99€ 4,18
100 +€ 3,85

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
754-5395
Fabrikantnummer:
IGW75N60TFKSA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

428 W

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 21.1 x 5.21mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Gerelateerde Links