Semikron Danfoss SKM150GAR12T4 Single IGBT Module, 232 A 1200 V, 5-Pin SEMITRANS2, Panel Mount
- RS-stocknr.:
- 687-4955
- Fabrikantnummer:
- SKM150GAR12T4
- Fabrikant:
- Semikron Danfoss
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Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 98,94
(excl. BTW)
€ 119,72
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 98,94 |
| 10 - 19 | € 73,51 |
| 20 + | € 69,86 |
*prijsindicatie
- RS-stocknr.:
- 687-4955
- Fabrikantnummer:
- SKM150GAR12T4
- Fabrikant:
- Semikron Danfoss
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Semikron Danfoss | |
| Maximum Continuous Collector Current | 232 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | SEMITRANS2 | |
| Configuration | Single | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 5 | |
| Transistor Configuration | Single | |
| Dimensions | 94 x 34 x 30.1mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Semikron Danfoss | ||
Maximum Continuous Collector Current 232 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type SEMITRANS2 | ||
Configuration Single | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 5 | ||
Transistor Configuration Single | ||
Dimensions 94 x 34 x 30.1mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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