Vishay VS-GT200TS065N, N-Channel Half Bridge IGBT, 193 A 650 V, 7-Pin INT-A-PAK, Panel
- RS-stocknr.:
- 276-6406
- Fabrikantnummer:
- VS-GT200TS065N
- Fabrikant:
- Vishay
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- RS-stocknr.:
- 276-6406
- Fabrikantnummer:
- VS-GT200TS065N
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Maximum Continuous Collector Current Ic | 193A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 517W | |
| Number of Transistors | 2 | |
| Configuration | Half Bridge | |
| Package Type | INT-A-PAK | |
| Mount Type | Panel | |
| Channel Type | N | |
| Pin Count | 7 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 30mm | |
| Width | 35.4mm | |
| Standards/Approvals | UL E78996 | |
| Length | 94.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Maximum Continuous Collector Current Ic 193A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 517W | ||
Number of Transistors 2 | ||
Configuration Half Bridge | ||
Package Type INT-A-PAK | ||
Mount Type Panel | ||
Channel Type N | ||
Pin Count 7 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Height 30mm | ||
Width 35.4mm | ||
Standards/Approvals UL E78996 | ||
Length 94.4mm | ||
Automotive Standard No | ||
- Land van herkomst:
- IT
The Vishay IGBT features Gen 4 FRED Pt technology anti parallel diodes with ultra soft reverse recovery characteristics. It is optimized for high current inverter stages (AC TIG welding machines).
UL approved
Very low conduction losses
Low EMI
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