Infineon IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3
- RS-stocknr.:
- 258-7725
- Fabrikantnummer:
- IKB10N60TATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 9,06
(excl. BTW)
€ 10,965
(incl. BTW)
Voeg 50 eenheden toe voor gratis bezorging
Op voorraad
- 945 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 1,812 | € 9,06 |
| 25 - 45 | € 1,632 | € 8,16 |
| 50 - 120 | € 1,54 | € 7,70 |
| 125 - 245 | € 1,43 | € 7,15 |
| 250 + | € 1,324 | € 6,62 |
*prijsindicatie
- RS-stocknr.:
- 258-7725
- Fabrikantnummer:
- IKB10N60TATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 110 W | |
| Package Type | TO-263-3 | |
| Configuration | Single Collector, Single Emitter, Single Gate | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 110 W | ||
Package Type TO-263-3 | ||
Configuration Single Collector, Single Emitter, Single Gate | ||
The Infineon IGBT discrete with anti parallel diode in TO-263 package. It has significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and field stop concept. It has low conduction and switching losses also.
Lowest VCEsat drop for lower conduction losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg
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