Infineon IGBT, 30 A 650 V, 3-Pin TO-220, Through Hole
- RS-stocknr.:
- 258-0986
- Fabrikantnummer:
- IGP30N65F5XKSA1
- Fabrikant:
- Infineon
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We weten niet of dit artikel weer voorradig zal zijn, het wordt door de fabrikant stopgezet.
- RS-stocknr.:
- 258-0986
- Fabrikantnummer:
- IGP30N65F5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 188W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 29.95mm | |
| Standards/Approvals | JEDEC | |
| Series | High Speed Fifth Generation | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 188W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Operating Temperature 175°C | ||
Length 29.95mm | ||
Standards/Approvals JEDEC | ||
Series High Speed Fifth Generation | ||
Height 4.57mm | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP 5 IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.
650V breakthrough voltage
Compared to Infineon’s Best-in-class High-speed 3 family
50V increase in the bus voltage possible without compromising reliability
Higher power density design
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