Semikron SKM150GB12F4G Half Bridge IGBT Transistor Module, 150 A 1200 V
- RS-stocknr.:
- 248-6698P
- Fabrikantnummer:
- SKM150GB12F4G
- Fabrikant:
- Semikron
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 248-6698P
- Fabrikantnummer:
- SKM150GB12F4G
- Fabrikant:
- Semikron
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Semikron | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±15.0V | |
| Number of Transistors | 2 | |
| Configuration | Half Bridge | |
| Alles selecteren | ||
|---|---|---|
Merk Semikron | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±15.0V | ||
Number of Transistors 2 | ||
Configuration Half Bridge | ||
The Semikron SEMITRANS series IGBT module has 1200 v collector to emitter voltage. It is mainly used in UPS, electronic welders, inductive heating, switched mode power supplies.
Increased power cycling capability
Insulated copper baseplate using DBC technology (Direct Bonded Copper)
For higher switching frequencies above 15kHz
Insulated copper baseplate using DBC technology (Direct Bonded Copper)
For higher switching frequencies above 15kHz
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