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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1000V
	Maximum Power Dissipation Pd	592W
	Number of Transistors	4
	Package Type	Q2PACK
	Mount Type	Surface
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Series	NXH350N100H4Q2F2S1G
	Height	12.3mm
	Length	93.1mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1000V
	Maximum Power Dissipation Pd 592W
	Number of Transistors 4
	Package Type Q2PACK
	Mount Type Surface
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Series NXH350N100H4Q2F2S1G
	Height 12.3mm
	Length 93.1mm
	Automotive Standard No

Datasheet - NXH350N100H4Q2F2S1G

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Solder pins

The ON Semiconductor Three Level NPC Q2 pack module is a high density, integrated power module combines high performance IGBTs with rugged anti parallel diodes.

Extremely efficient trench with field stop technology

Low switching loss reduces system power dissipation

Module design offers high power density

Low inductive layout

Low package height

These devices are Pb free, Halogen Free,BFR Free and are RoHS Compliant

onsemi IGBT Module 1000 V Q2PACK, Surface

Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package Solder pins

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