Infineon FP75R12KT3BOSA1 IGBT Module, 105 A 1200 V EconoPIM
- RS-stocknr.:
- 244-5840
- Fabrikantnummer:
- FP75R12KT3BOSA1
- Fabrikant:
- Infineon
Subtotaal (1 tray van 10 eenheden)*
€ 1.545,09
(excl. BTW)
€ 1.869,56
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 10 + | € 154,509 | € 1.545,09 |
*prijsindicatie
- RS-stocknr.:
- 244-5840
- Fabrikantnummer:
- FP75R12KT3BOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 105 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation | 355 W | |
| Package Type | EconoPIM | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 105 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation 355 W | ||
Package Type EconoPIM | ||
The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives medical application etc.
Electrical Features
Low switching losses
Tvj op = 150° C
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
Pressfit contact technology
Standard housing
Low switching losses
Tvj op = 150° C
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
Pressfit contact technology
Standard housing
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