onsemi IGBT 650 V, 3-Pin TO-247-4LD, Surface
- RS-stocknr.:
- 241-0733
- Fabrikantnummer:
- FGHL75T65LQDTL4
- Fabrikant:
- onsemi
Subtotaal (1 tube van 450 eenheden)*
€ 1.924,65
(excl. BTW)
€ 2.328,75
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 80,00
Tijdelijk niet op voorraad
- Verzending vanaf 13 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 450 + | € 4,277 | € 1.924,65 |
*prijsindicatie
- RS-stocknr.:
- 241-0733
- Fabrikantnummer:
- FGHL75T65LQDTL4
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 469W | |
| Package Type | TO-247-4LD | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | FGHL75T65LQDTL4 | |
| Length | 15.87mm | |
| Height | 4.82mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 469W | ||
Package Type TO-247-4LD | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series FGHL75T65LQDTL4 | ||
Length 15.87mm | ||
Height 4.82mm | ||
Automotive Standard No | ||
The ON Semiconductor 650 V, 75 A FS4 low Vce(sat) IGBT. This offer the optimum performance by balancing Vce(sat) and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other high performance power conversion applications.
Positive temperature co-efficient
Easy paralleling operation
Low conduction losses
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