Infineon, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 226-6118P
- Fabrikantnummer:
- IKW50N65EH5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 10 eenheden (geleverd in een buis)*
€ 47,15
(excl. BTW)
€ 57,05
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Op voorraad
- Plus verzending 166 stuk(s) vanaf 20 juli 2026
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Aantal stuks | Per stuk |
|---|---|
| 10 - 18 | € 4,715 |
| 20 - 48 | € 4,41 |
| 50 - 98 | € 4,09 |
| 100 + | € 3,775 |
*prijsindicatie
- RS-stocknr.:
- 226-6118P
- Fabrikantnummer:
- IKW50N65EH5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 275W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Series | High Speed Fifth Generation | |
| Length | 41.42mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 275W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Series High Speed Fifth Generation | ||
Length 41.42mm | ||
Automotive Standard No | ||
The Infineon IKW50N65EH5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
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