onsemi NFAM0512L5BT, Type N-Channel IPM, 5 A 1200 V, 39-Pin DIP, Surface
- RS-stocknr.:
- 221-6684
- Fabrikantnummer:
- NFAM0512L5BT
- Fabrikant:
- onsemi
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 221-6684
- Fabrikantnummer:
- NFAM0512L5BT
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | IPM | |
| Maximum Continuous Collector Current Ic | 5A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 59W | |
| Package Type | DIP | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 39 | |
| Switching Speed | 20kHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Maximum Gate Emitter Voltage VGEO | 16.5 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | IPM | |
| Standards/Approvals | UL1557 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type IPM | ||
Maximum Continuous Collector Current Ic 5A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 59W | ||
Package Type DIP | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 39 | ||
Switching Speed 20kHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Maximum Gate Emitter Voltage VGEO 16.5 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series IPM | ||
Standards/Approvals UL1557 | ||
Automotive Standard No | ||
The ON Semiconductor NFAM0512L5BT is a fully−integrated inverter power module consisting of an independent High side gate driver, LVIC, six IGBT’s and a temperature sensor (VTS and NTC Thermistor), suitable for driving permanent magnet synchronous (PMSM) motors, brushless DC (BLDC) motors and AC asynchronous motor.
Active Logic Interface
Built−in Under−voltage protection
Integrated bootstrap diodes and resistors
Separate low−side IGBT emitter connections for individual current sensing of each phase
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