Infineon FF400R17KE4HOSA1, N-Channel IGBT Module, 400 A 1700 V, 7-Pin, Through Hole

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  • Verzending vanaf 11 januari 2027
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Verpakkingsopties
RS-stocknr.:
218-4335
Fabrikantnummer:
FF400R17KE4HOSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

IGBT Module

Maximum Continuous Collector Current Ic

400A

Maximum Collector Emitter Voltage Vceo

1700V

Number of Transistors

2

Mount Type

Through Hole

Channel Type

N

Pin Count

7

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.45V

Maximum Operating Temperature

175°C

Series

FF400R17KE4

Height

30.9mm

Standards/Approvals

No

Length

106.4mm

Width

61.4mm

Automotive Standard

No

Infineon FF400R17KE4 Series IGBT Module, 1700V Collector‑Emitter Voltage, 400A Collector Current - FF400R17KE4HOSA1


This IGBT module is a power-switching component designed for high-voltage, high-current industrial applications. It combines two switching transistors in a through-hole package to control large DC currents while operating across a wide temperature range, making it suitable for demanding power-conversion tasks.

Features and Benefits:


• 1700 V blocking capability enables high-voltage system use
• 400 A continuous collector current supports heavy-load switching
• 20 V gate-emitter rating allows robust gate-drive margin
• VCE(sat) 2.45 V minimises conduction losses under load
• 2-transistor configuration provides Compact dual-switch implementation

Applications


• Suitable for high-voltage DC power converters
• Ideal for large motor-drive inverter stages
• Used with industrial rectifier and chopper circuits
• Can be used for high-current welding power supplies

What pin count and mounting style does it use?


It uses seven electrical pins and is designed for through-hole mounting.

What ambient conditions can it tolerate during operation?


It can operate at temperatures up to 175 °C and down to −40 °C.

How many switching elements are contained within the package?


The module contains two discrete transistors for dual switching arrangements.

What is the maximum collector-emitter voltage rating?


The device is rated for a maximum collector-emitter voltage of 1700 V.

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