Fabrikantnummer

STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)

RS-stocknr.:: 204-9868P
Fabrikantnummer:: STGB30H65DFB2
Fabrikant:: STMicroelectronics

STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)

Bulkkorting beschikbaar

Subtotaal 50 eenheden (geleverd op een doorlopende strip)*

€ 114,20

(excl. BTW)

€ 138,20

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk

Aantal stuks	Per stuk
50 - 95	€ 2,284
100 - 245	€ 1,828
250 - 495	€ 1,524
500 +	€ 1,342

*prijsindicatie

RS-stocknr.:: 204-9868P
Fabrikantnummer:: STGB30H65DFB2
Fabrikant:: STMicroelectronics

Specificaties

Datasheets

Wetgeving en conformiteit

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	STMicroelectronics
	Maximum Continuous Collector Current	50 A
	Maximum Collector Emitter Voltage	650 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	167 W
	Number of Transistors	1
	Package Type	D2PAK (TO-263)
	Pin Count	3

	Alles selecteren
	Merk STMicroelectronics
	Maximum Continuous Collector Current 50 A
	Maximum Collector Emitter Voltage 650 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 167 W
	Number of Transistors 1
	Package Type D2PAK (TO-263)
	Pin Count 3

Datasheet - STGB30H65DFB2

Land van herkomst:: CN

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution