onsemi NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole

Bekijk alle IGBTs
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
RS-stocknr.:
202-5681
Fabrikantnummer:
NXH35C120L2C2SG
Fabrikant:
onsemi
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

onsemi

Maximum Continuous Collector Current

35 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20.0V

Number of Transistors

6

Configuration

3 Phase

Package Type

DIP26

Mounting Type

Through Hole

Channel Type

N

The ON Semiconductor transfer molded power module containing a converter-inverter-brake circuit consisting of six 35 Ampere and 1600 Volts rectifiers, six 35 Ampere and 1200 Volts IGBTs with inverse diodes, one 35 Ampere and 1200 Volts brake IGBT with brake diode and an NTC thermistor.

Low thermal resistance
6mm clearance distance between pin to heatsink
Solderable pins
Thermistor
Pb free
Halogen free or BFR free
RoHS compliant

Gerelateerde Links