onsemi, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 202-5670
- Fabrikantnummer:
- AFGHL40T65SQD
- Fabrikant:
- onsemi
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 202-5670
- Fabrikantnummer:
- AFGHL40T65SQD
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 238W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Gate Emitter Voltage VGEO | ±30.0 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | Trench | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 238W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Gate Emitter Voltage VGEO ±30.0 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series Trench | ||
Automotive Standard AEC-Q101 | ||
The ON Semiconductor Field Stop Trench IGBT offers the optimum performance for both hard and soft switching topology in automotive application. It is a stand-alone IGBT.
AEC-Q101 qualified
High current capability
Fast switching
Tight parameter distribution
RoHS compliant
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