Vishay SIHG47N60EF-GE3 IGBT

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Subtotaal 10 eenheden (geleverd in een buis)*

€ 83,40

(excl. BTW)

€ 100,90

(incl. BTW)

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10 - 24€ 8,34
25 - 49€ 7,90
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100 +€ 7,12

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
180-7913P
Fabrikantnummer:
SIHG47N60EF-GE3
Fabrikant:
Vishay
Land van herkomst:
CN

Vishay MOSFET


The Vishay through-hole N-channel TO-247AC-3 MOSFET is a new age product with a drain-source voltage of 600V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 65mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 379W and continuous drain current of 47A. It has a drive voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Fast body diode MOSFET using E series technology
• Halogen free
• Increased robustness due to low Qrr
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Operating temperature ranges between -55°C and 150°C
• Reduced trr, Qrr and IRRM
• Ultra low gate charge (Qg)

Applications


• Light emitting diodes (LEDs)
• 3-level inverters
• AC/DC bridges
• ATX power supplies
• High-intensity lighting (HID)
• LLC
• Phase shifted bridges (ZVS)
• Power factor correction power supplies (PFC)
• Server and telecom power supplies
• Solar PV inverters

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• UIS tested

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