Infineon FP35R12W2T4B11BOMA1 3 Phase Bridge IGBT Module, 54 A 1200 V, 35-Pin EASY2B, PCB Mount

Bekijk alle IGBTs
Bulkkorting beschikbaar

Subtotaal (1 doos van 15 eenheden)*

€ 849,495

(excl. BTW)

€ 1.027,89

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending 15 stuk(s) vanaf 12 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per Doos*
15 - 15€ 56,633€ 849,50
30 +€ 53,802€ 807,03

*prijsindicatie

RS-stocknr.:
168-8771
Fabrikantnummer:
FP35R12W2T4B11BOMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Maximum Continuous Collector Current

54 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

215 W

Package Type

EASY2B

Configuration

3 Phase Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

35

Switching Speed

1MHz

Transistor Configuration

3 Phase

Dimensions

56.7 x 48 x 12mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Land van herkomst:
CN

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Gerelateerde Links