IXYS IXA45IF1200HB IGBT, 78 A 1200 V, 3-Pin TO-247, Through Hole

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RS-stocknr.:
168-4776
Fabrikantnummer:
IXA45IF1200HB
Fabrikant:
IXYS
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Merk

IXYS

Maximum Continuous Collector Current

78 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

325 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.3 x 21.46mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+125 °C

Land van herkomst:
US

IGBT Discretes, IXYS XPT series


The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages


IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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