onsemi FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN, Through Hole
- RS-stocknr.:
- 166-2181
- Fabrikantnummer:
- FGA60N65SMD
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 106,05
(excl. BTW)
€ 128,31
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 90 | € 3,535 | € 106,05 |
| 120 - 240 | € 3,107 | € 93,21 |
| 270 - 480 | € 3,033 | € 90,99 |
| 510 + | € 2,693 | € 80,79 |
*prijsindicatie
- RS-stocknr.:
- 166-2181
- Fabrikantnummer:
- FGA60N65SMD
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Maximum Continuous Collector Current | 120 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 600 W | |
| Package Type | TO-3PN | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.8 x 5 x 20.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Maximum Continuous Collector Current 120 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 600 W | ||
Package Type TO-3PN | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.8 x 5 x 20.1mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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