Infineon IKY50N120CH3XKSA1, P-Channel IGBT, 100 A 1200 V, 4-Pin TO-247, Through Hole

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RS-stocknr.:
162-3316
Fabrikantnummer:
IKY50N120CH3XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

652 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

60kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 22.5mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Energy Rating

4.2mJ

Gate Capacitance

3269pF

Responding to the market requirement of high power density and highest performance discrete products Infineon introduces the new Kelvin Emitter TO-247PLUS 4pin package for 1200V IGBT. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses Ets.

Extremely low control inductance loop with extra emitter pin for driver feedback
20% reduction in total switching losses compared to 3pin package using same technology
Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
Highest efficiency with lowest switching losses 1200 V IGBT
High power density 1200V discrete IGBT
Lower thermal resistance

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