Infineon IKY50N120CH3XKSA1 IGBT, 100 A 1200 V, 4-Pin TO-247
- RS-stocknr.:
- 162-3316
- Fabrikantnummer:
- IKY50N120CH3XKSA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 162-3316
- Fabrikantnummer:
- IKY50N120CH3XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 100A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 652W | |
| Package Type | TO-247 | |
| Pin Count | 4 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.35V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 41.2mm | |
| Height | 5.1mm | |
| Standards/Approvals | No | |
| Width | 15.9 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 100A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 652W | ||
Package Type TO-247 | ||
Pin Count 4 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.35V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 41.2mm | ||
Height 5.1mm | ||
Standards/Approvals No | ||
Width 15.9 mm | ||
Automotive Standard No | ||
Responding to the market requirement of high power density and highest performance discrete products Infineon introduces the new Kelvin Emitter TO-247PLUS 4pin package for 1200V IGBT. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses Ets.
Extremely low control inductance loop with extra emitter pin for driver feedback
20% reduction in total switching losses compared to 3pin package using same technology
Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
Highest efficiency with lowest switching losses 1200 V IGBT
High power density 1200V discrete IGBT
Lower thermal resistance
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