Infineon FF400R12KE3HOSA1 Series IGBT Module, 580 A 1200 V AG-62MM-1, Panel Mount

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  • Verzending vanaf 19 november 2027
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RS-stocknr.:
111-6085
Fabrikantnummer:
FF400R12KE3HOSA1
Fabrikant:
Infineon
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Merk

Infineon

Maximum Continuous Collector Current

580 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

2

Maximum Power Dissipation

2 kW

Configuration

Series

Package Type

AG-62MM-1

Mounting Type

Panel Mount

Channel Type

N

Transistor Configuration

Series

Dimensions

106.4 x 61.4 x 30.9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

28nF

Maximum Operating Temperature

+125 °C

Infineon IGBT Module, 580A Maximum Continuous Collector Current, 1200V Maximum Collector Emitter Voltage - FF400R12KE3HOSA1


This IGBT module is engineered to enhance performance in various industrial applications. With dimensions of 106.4 x 61.4 x 30.9 mm, it combines high efficiency with robust specifications, offering a maximum continuous collector current of 580A and a collector-emitter voltage rating of 1200V. Its design allows for effective integration into power electronic circuits, making it an ideal choice for those requiring reliable modular IGBT solutions.

Features & Benefits


• Maximum gate-emitter voltage of ±20V provides operational flexibility
• High power dissipation capability of 2kW supports demanding requirements
• Designed for panel mounting, ensuring easy installation in various environments
• Series configuration optimises space and operational efficiency

Applications


• Utilised in inverter circuits for industrial machinery
• Optimised for renewable energy systems, such as solar inverters
• Effective in electric vehicles and propulsion systems
• Used in heavy-duty automation equipment where high current is vital

What are the thermal resistance specifications for this module?


The thermal resistance from junction to case is 0.062 K/W, and from case to heatsink is 0.031 K/W, ensuring effective heat dissipation during operation.

How does this IGBT module perform under varying temperatures?


With a maximum operating temperature of +125°C and a minimum of -40°C, it is suitable for diverse environmental conditions and demanding applications.

What are the implications of the high collector current rating?


A maximum continuous collector current rating of 580A means this IGBT module can handle significant power loads, making it ideal for high current IGBT applications in industrial settings.

Can this module handle fast switching operations effectively?


Yes, the low gate capacitance of 28nF and specified gate drive capabilities enable efficient fast switching, increasing the performance of power electronic components in circuits.


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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