Infineon IHW20N120R3FKSA1 IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 110-7751
- Fabrikantnummer:
- IHW20N120R3FKSA1
- Fabrikant:
- Infineon
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
Alternatief
Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.
la pièce
5,93 €
(excl. BTW)
7,18 €
(incl. BTW)
- RS-stocknr.:
- 110-7751
- Fabrikantnummer:
- IHW20N120R3FKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 40 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 310 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.1mm | |
| Gate Capacitance | 1503pF | |
| Minimum Operating Temperature | -40 °C | |
| Energy Rating | 1.65mJ | |
| Maximum Operating Temperature | +175 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 40 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 310 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Gate Capacitance 1503pF | ||
Minimum Operating Temperature -40 °C | ||
Energy Rating 1.65mJ | ||
Maximum Operating Temperature +175 °C | ||
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.