Infineon FS150R12KT4BOSA1 3 Phase Bridge IGBT Module, 150 A 1200 V, 35-Pin EconoPACK 3, Surface Mount
- RS-stocknr.:
- 110-7108
- Fabrikantnummer:
- FS150R12KT4BOSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 141,46
(excl. BTW)
€ 171,17
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 november 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 141,46 |
*prijsindicatie
- RS-stocknr.:
- 110-7108
- Fabrikantnummer:
- FS150R12KT4BOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 750 W | |
| Package Type | EconoPACK 3 | |
| Configuration | 3 Phase Bridge | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 35 | |
| Transistor Configuration | 3 Phase | |
| Dimensions | 122 x 62 x 17mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +150 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 750 W | ||
Package Type EconoPACK 3 | ||
Configuration 3 Phase Bridge | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 35 | ||
Transistor Configuration 3 Phase | ||
Dimensions 122 x 62 x 17mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +150 °C | ||
N.v.t.
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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