Starpower GD800HFY120C3S, N-Channel Dual IGBT Module, 1203 A 1200 V Module
- RS-stocknr.:
- 427-735
- Fabrikantnummer:
- GD800HFY120C3S
- Fabrikant:
- Starpower
Subtotaal (1 eenheid)*
€ 323,82
(excl. BTW)
€ 391,82
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 7 stuk(s) vanaf 19 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 323,82 |
*prijsindicatie
- RS-stocknr.:
- 427-735
- Fabrikantnummer:
- GD800HFY120C3S
- Fabrikant:
- Starpower
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Starpower | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 1203A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 3836W | |
| Package Type | Module | |
| Configuration | Dual | |
| Channel Type | N | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Starpower | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 1203A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 3836W | ||
Package Type Module | ||
Configuration Dual | ||
Channel Type N | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Starpower IGBT Power Module provides ultralow conduction loss as well as short circuit ruggedness. They are designed for the applications such as high power converters.
VCE(sat) with positive temperature coefficient
Maximum junction temperature 175°C
Low inductance case
Fast and soft reverse recovery anti parallel FWD
Isolated copper baseplate using DBC technology
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