Infineon IGQ75N120S7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 1200 V, 3-Pin PG-TO247-3-PLUS-N,
- RS-stocknr.:
- 284-979
- Fabrikantnummer:
- IGQ75N120S7XKSA1
- Fabrikant:
- Infineon
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 284-979
- Fabrikantnummer:
- IGQ75N120S7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 630 W | |
| Number of Transistors | 1 | |
| Package Type | PG-TO247-3-PLUS-N | |
| Configuration | Single Collector, Single Emitter, Single Gate | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 630 W | ||
Number of Transistors 1 | ||
Package Type PG-TO247-3-PLUS-N | ||
Configuration Single Collector, Single Emitter, Single Gate | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
The Infineon IGBT is designed to operate efficiently at 1200 V while ensuring robust performance in demanding applications. Featuring cutting edge trench technology, this device excels in handling high current levels of up to 75 A, making it ideal for industrial power supplies and renewable energy systems such as solar inverters. The meticulous design ensures low saturation voltage and significant dv/dt controllability, enhancing the reliability and efficiency of power conversion systems. With a strong emphasis on durability, this IGBT is validated for industrial applications according to stringent JEDEC standards, ensuring it meets the rigorous demands of modern electronics.
Designed with trench technology for efficiency
Short circuit ruggedness ensures reliable performance
Wide temperature range for diverse applications
Reduced switching losses enhance thermal management
Optimized for high performance industrial use
Comprehensive PSpice models for easy integration
Low gate charge enables faster switching speeds
Short circuit ruggedness ensures reliable performance
Wide temperature range for diverse applications
Reduced switching losses enhance thermal management
Optimized for high performance industrial use
Comprehensive PSpice models for easy integration
Low gate charge enables faster switching speeds
Gerelateerde Links
- Infineon IGQ75N120S7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 1200 V, 3-Pin PG-TO247-3-PLUS-N,
- Infineon IGQ100N120S7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 100 A 1200 V, 3-Pin PG-TO247-3-PLUS-N,
- Infineon IKQ120N120CS7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 120 A 1200 V, 3-Pin PG-TO247-3-PLUS-N,
- Infineon IGQ120N120S7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 120 A 1200 V, 3-Pin PG-TO247-3-PLUS-N,
- Infineon IKQ100N120CS7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 100 A 1200 V, 3-Pin PG-TO247-3-PLUS-N,
- Infineon IKQ50N120CH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 62 A 1200 V, 3-Pin PG-TO247-3-PLUS-N,
- Infineon IKQ75N120CS7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 1200 V, 3-Pin PG-TO247-3-PLUS-N,
- Infineon IKQ75N120CH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 1200 V, 3-Pin PG-TO247-3-PLUS-N,
