Infineon FF600R12KE7EHPSA1 Single Collector, Single Emitter, Single Gate IGBT, 600 A 1200 V, 3-Pin AG-62MMHB, Through
- RS-stocknr.:
- 284-966
- Fabrikantnummer:
- FF600R12KE7EHPSA1
- Fabrikant:
- Infineon
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 284-966
- Fabrikantnummer:
- FF600R12KE7EHPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 600 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 2 | |
| Configuration | Single Collector, Single Emitter, Single Gate | |
| Package Type | AG-62MMHB | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 600 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 2 | ||
Configuration Single Collector, Single Emitter, Single Gate | ||
Package Type AG-62MMHB | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
The Infineon IGBT Module is a 62 mm 1200 V, 600 A dual low saturation and fast trench IGBT module with TRENCHSTOP IGBT7 and emitter controlled diode. Existing packages with higher current capability, allows to increase inverter output power with same frame size. Reduced system costs by simplification of the inverter systems.
Highest power density
Best in class VCEsat
High creepage and clearance distances
Isolated base plate
Standard housing
RoHS compliant
4 kV AC 1 min Insulation
Best in class VCEsat
High creepage and clearance distances
Isolated base plate
Standard housing
RoHS compliant
4 kV AC 1 min Insulation
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