STMicroelectronics STGB3NC120HDT4, Type N-Channel IGBT, 14 A 1200 V, 3-Pin TO-263, Surface
- RS-stocknr.:
- 151-940P
- Fabrikantnummer:
- STGB3NC120HDT4
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 50 eenheden (geleverd op een doorlopende strip)*
€ 96,10
(excl. BTW)
€ 116,30
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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Aantal stuks | Per stuk |
|---|---|
| 50 - 245 | € 1,922 |
| 250 - 495 | € 1,716 |
| 500 + | € 1,474 |
*prijsindicatie
- RS-stocknr.:
- 151-940P
- Fabrikantnummer:
- STGB3NC120HDT4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 14A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 75W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 15ns | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 16mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 14A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 75W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 15ns | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 16mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics IGBT shows an excellent trade off between low conduction losses and fast switching performance. It is designed in Power MESH technology combined with high voltage ultrafast diode.
High voltage capability
High speed
Very soft ultrafast recovery anti parallel diode
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