Infineon, Gate Driver 2, 5 A 10-Pin 17 V, VSON
- RS-stocknr.:
- 260-1069
- Fabrikantnummer:
- 2EDL8124G3CXTMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 1.752,00
(excl. BTW)
€ 2.121,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,584 | € 1.752,00 |
*prijsindicatie
- RS-stocknr.:
- 260-1069
- Fabrikantnummer:
- 2EDL8124G3CXTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 5A | |
| Pin Count | 10 | |
| Fall Time | 6ns | |
| Package Type | VSON | |
| Driver Type | Gate Driver | |
| Minimum Supply Voltage | 17V | |
| Maximum Supply Voltage | 17V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Gate Driver Module | ||
Output Current 5A | ||
Pin Count 10 | ||
Fall Time 6ns | ||
Package Type VSON | ||
Driver Type Gate Driver | ||
Minimum Supply Voltage 17V | ||
Maximum Supply Voltage 17V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon LED driver is a 16 channel device with integrated and protected output stages and designed to control LEDs with a current up to 76.5 mA as linear current sink. It consist of a power stages that can be configured in parallel for higher load currents. Each individual power output stage is configured to a 6-bit current set value stored.
Robust operation
High power density
High efficiency
Strong MOSFET reliability
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