Infineon, 1.8 A 20 V, SOIC
- RS-stocknr.:
- 258-4007
- Fabrikantnummer:
- IRS21814STRPBF
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2500 eenheden)*
€ 1.950,00
(excl. BTW)
€ 2.350,00
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 2.500 stuk(s) vanaf 15 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,78 | € 1.950,00 |
*prijsindicatie
- RS-stocknr.:
- 258-4007
- Fabrikantnummer:
- IRS21814STRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 1.8A | |
| Fall Time | 35ns | |
| Package Type | SOIC | |
| Number of Outputs | 2 | |
| Rise Time | 40ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | IRS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Gate Driver Module | ||
Output Current 1.8A | ||
Fall Time 35ns | ||
Package Type SOIC | ||
Number of Outputs 2 | ||
Rise Time 40ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Series IRS | ||
Automotive Standard No | ||
The Infineon high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high Pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Gate drive supply range from 10 V to 20 V
Under voltage lockout for both channels
3.3 V and 5 V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5 V offset
Lower di/dt gate driver for better noise immunity
Output source/sink current capability 1.4 A/1.8 A
RoHS compliant