Infineon IR2103STRPBF, Gate Driver, 270 mA 8-Pin 25 V, SOIC
- RS-stocknr.:
- 258-3925
- Fabrikantnummer:
- IR2103STRPBF
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 2 eenheden)*
€ 1,10
(excl. BTW)
€ 1,34
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- Plus verzending 1.832 stuk(s) vanaf 15 december 2025
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 + | € 0,55 | € 1,10 |
*prijsindicatie
- RS-stocknr.:
- 258-3925
- Fabrikantnummer:
- IR2103STRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 270mA | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 50ns | |
| Driver Type | Gate Driver | |
| Rise Time | 100ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | IR21xx | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Gate Driver Module | ||
Output Current 270mA | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 50ns | ||
Driver Type Gate Driver | ||
Rise Time 100ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series IR21xx | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon half-bridge driver is are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Under voltage lockout