Infineon 2ED21814S06JXUMA1, Gate Driver 2, 2.5 A 20 V, DSO
- RS-stocknr.:
- 258-0611
- Fabrikantnummer:
- 2ED21814S06JXUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 4,83
(excl. BTW)
€ 5,844
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 2.500 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 2,415 | € 4,83 |
| 20 - 48 | € 2,05 | € 4,10 |
| 50 - 98 | € 1,905 | € 3,81 |
| 100 - 198 | € 1,785 | € 3,57 |
| 200 + | € 1,645 | € 3,29 |
*prijsindicatie
- RS-stocknr.:
- 258-0611
- Fabrikantnummer:
- 2ED21814S06JXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 2.5A | |
| Fall Time | 15ns | |
| Package Type | DSO | |
| Driver Type | Gate Driver | |
| Rise Time | 200ns | |
| Minimum Supply Voltage | 10V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | 2ED21814S06J | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Gate Driver Module | ||
Output Current 2.5A | ||
Fall Time 15ns | ||
Package Type DSO | ||
Driver Type Gate Driver | ||
Rise Time 200ns | ||
Minimum Supply Voltage 10V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS Compliant | ||
Series 2ED21814S06J | ||
Automotive Standard No | ||
The Infineon 650 V high and low side gate driver with high current, and high speed to drive MOSFET and IGBT, with typical 2.5 A sink and source current in DSO-14 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
High and Low Voltage Pins Separated for Maximum Creep age and Clearance
Separate logic and power ground
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