onsemi NCP51561DBDWR2G MOSFET Gate Driver, 6.5 A 16-Pin 5 V, SOIC

Bekijk alle Gate Drivers
Bulkkorting beschikbaar

Subtotaal (1 eenheid)*

€ 4,68

(excl. BTW)

€ 5,66

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Laatste voorraad RS
  • Laatste 966 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks
Per stuk
1 - 9€ 4,68
10 - 99€ 4,03
100 - 499€ 3,49
500 +€ 3,07

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
244-9161
Fabrikantnummer:
NCP51561DBDWR2G
Fabrikant:
onsemi
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

onsemi

Product Type

MOSFET

Output Current

6.5A

Pin Count

16

Package Type

SOIC

Fall Time

16ns

Driver Type

MOSFET

Rise Time

19ns

Minimum Supply Voltage

5V

Maximum Supply Voltage

5V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Series

NCP51

Automotive Standard

No

The ON Semiconductor Isolated High Current IGBT/MOSFET Gate Driver is high−current single channel. IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation,designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A/D/F), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C/E) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3V to 20V and they are available in wide−body SOIC−8 package.

High Peak Output Current (+6.5 A/−6.5 A)

Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn−on (Version A/D/F)

Short Propagation Delays with Accurate Matching

IGBT/MOSFET Gate Clamping during Short Circuit

IGBT/MOSFET Gate Active Pull Down

Tight UVLO Thresholds for Bias Flexibility

Wide Bias Voltage Range including Negative VEE2 (Version B)

3.3 V, 5 V, and 15 V Logic Input

5 kVrms Galvanic Isolation

High Transient Immunity

High Electromagnetic Immunity

Gerelateerde Links