onsemi NCV57090FDWR2G MOSFET Gate Driver 1, 6.5 A 8-Pin 22 V, SOIC
- RS-stocknr.:
- 233-6842
- Fabrikantnummer:
- NCV57090FDWR2G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 7,37
(excl. BTW)
€ 8,918
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Laatste voorraad RS
- Laatste 1.000 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,685 | € 7,37 |
| 20 - 198 | € 3,175 | € 6,35 |
| 200 + | € 2,755 | € 5,51 |
*prijsindicatie
- RS-stocknr.:
- 233-6842
- Fabrikantnummer:
- NCV57090FDWR2G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Output Current | 6.5A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 13ns | |
| Number of Outputs | 5 | |
| Driver Type | MOSFET | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 22V | |
| Maximum Supply Voltage | 22V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 2.65mm | |
| Standards/Approvals | No | |
| Width | 6.05 mm | |
| Series | NCx57090y | |
| Length | 7.6mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Output Current 6.5A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 13ns | ||
Number of Outputs 5 | ||
Driver Type MOSFET | ||
Rise Time 13ns | ||
Minimum Supply Voltage 22V | ||
Maximum Supply Voltage 22V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 2.65mm | ||
Standards/Approvals No | ||
Width 6.05 mm | ||
Series NCx57090y | ||
Length 7.6mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCV57090FDWR2G is a high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp for system design convenience. It has a low Clamp voltage drop that eliminates the need of negative power supply to prevent spurious gate turn−on. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package.
It has High peak output current (+6.5 A/−6.5 A)
It provides short propagation delays with accurate matching
It offers IGBT/MOSFET gate clamping during short circuit
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