Infineon IRS2101STRPBF MOSFET Gate Driver, 290 mA 8-Pin 600V, SOIC
- RS-stocknr.:
- 226-6179
- Fabrikantnummer:
- IRS2101STRPBF
- Fabrikant:
- Infineon
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€ 9,45
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|---|---|---|
| 10 - 40 | € 0,781 | € 7,81 |
| 50 - 90 | € 0,742 | € 7,42 |
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| 250 - 490 | € 0,68 | € 6,80 |
| 500 + | € 0,632 | € 6,32 |
*prijsindicatie
- RS-stocknr.:
- 226-6179
- Fabrikantnummer:
- IRS2101STRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 290mA | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 90ns | |
| Driver Type | MOSFET | |
| Number of Outputs | 2 | |
| Rise Time | 170ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 600V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | IRS | |
| Width | 4mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 5mm | |
| Height | 1.75mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Gate Driver | ||
Output Current 290mA | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 90ns | ||
Driver Type MOSFET | ||
Number of Outputs 2 | ||
Rise Time 170ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 600V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series IRS | ||
Width 4mm | ||
Standards/Approvals RoHS Compliant | ||
Length 5mm | ||
Height 1.75mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
Infineon IRS Series Gate Driver, 10V Minimum Supply Voltage, 600V Maximum Supply Voltage - IRS2101STRPBF
This gate driver provides dual-channel control for MOSFET switching in high-voltage applications, accepting a supply down to 10 V and operating up to 600 V. It is supplied in an 8-pin surface-mount SOIC package and is intended for users needing compact, high-voltage MOSFET driving capability across a wide temperature range.
Features and Benefits:
• 290 mA output current delivers sufficient gate drive for medium-power MOSFETs
• 170 ns rise time enables relatively fast turn-on for efficient switching
• 90 ns fall time ensures timely turn-off to limit overlap losses
• Rated to 600 V operation supports high-voltage topologies
• Operates from 10 V supply for compatibility with common control rails
• RoHS compliance reduces hazardous substance concerns in assemblies
• 170 ns rise time enables relatively fast turn-on for efficient switching
• 90 ns fall time ensures timely turn-off to limit overlap losses
• Rated to 600 V operation supports high-voltage topologies
• Operates from 10 V supply for compatibility with common control rails
• RoHS compliance reduces hazardous substance concerns in assemblies
Applications
• Suitable for high-voltage switch-mode power supplies
• Used with half-bridge MOSFET arrangements in converters
• Suitable for industrial motor-drive gate control
• Used in power factor correction stage gate driving
• Can be used for isolated gate-drive implementations
• Used with half-bridge MOSFET arrangements in converters
• Suitable for industrial motor-drive gate control
• Used in power factor correction stage gate driving
• Can be used for isolated gate-drive implementations
What package and mounting style does it use?
It is supplied in an 8-pin SOIC package designed for surface mount.
What ambient temperature range can it handle?
The device functions across -40 °C to 125 °C operating extremes.
How many independent outputs are available?
There are two outputs provided for dual-MOSFET control.
Is it suitable for automotive specification use?
It is not classified as an automotive-standard device.
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