Infineon 1EDN8511BXUSA1 MOSFET Gate Driver 1, 8 A 6-Pin 20 V, SOT-23
- RS-stocknr.:
- 222-4767
- Fabrikantnummer:
- 1EDN8511BXUSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 15 eenheden)*
€ 5,43
(excl. BTW)
€ 6,57
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 15 - 60 | € 0,362 | € 5,43 |
| 75 - 135 | € 0,343 | € 5,15 |
| 150 - 360 | € 0,337 | € 5,06 |
| 375 - 735 | € 0,315 | € 4,73 |
| 750 + | € 0,29 | € 4,35 |
*prijsindicatie
- RS-stocknr.:
- 222-4767
- Fabrikantnummer:
- 1EDN8511BXUSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Output Current | 8A | |
| Pin Count | 6 | |
| Fall Time | 4.5ns | |
| Package Type | SOT-23 | |
| Number of Outputs | 2 | |
| Driver Type | MOSFET | |
| Rise Time | 6.5ns | |
| Minimum Supply Voltage | 4.2V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | 1EDN8511B | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Height | 1.45mm | |
| Width | 1.6 mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Output Current 8A | ||
Pin Count 6 | ||
Fall Time 4.5ns | ||
Package Type SOT-23 | ||
Number of Outputs 2 | ||
Driver Type MOSFET | ||
Rise Time 6.5ns | ||
Minimum Supply Voltage 4.2V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series 1EDN8511B | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Height 1.45mm | ||
Width 1.6 mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 1-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness.
-10V robustness of control and enable inputs provides crucial safety margin when driving pulse transformers
5A reverse output current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in TO-220 and TO-247 packages
Cool driver ICs thanks to true rail-to-rail low impedance output stages
4V and 8V UVLO (Under Voltage Lock Out) options for instant MOSFET protection during start-up and under abnormal conditions
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