STMicroelectronics STGAP2SICSC MOSFET Gate Driver 1 8-Pin, SO-8W
- RS-stocknr.:
- 208-5078P
- Fabrikantnummer:
- STGAP2SICSC
- Fabrikant:
- STMicroelectronics
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 208-5078P
- Fabrikantnummer:
- STGAP2SICSC
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Pin Count | 8 | |
| Package Type | SO-8W | |
| Driver Type | MOSFET | |
| Number of Drivers | 1 | |
| Mount Type | Surface | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Pin Count 8 | ||
Package Type SO-8W | ||
Driver Type MOSFET | ||
Number of Drivers 1 | ||
Mount Type Surface | ||
The STMicroelectronics STGAP2SICS is a single gate driver which provides galvanic isolation between the gate driving channel and the low voltage control and Interface circuitry. The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications. The device is available in two different configurations. The configuration with separated output pins allows to independently optimize turn-on and turn-off by using dedicated gate resistors. The configuration featuring single output pin and Miller CLAMP function prevents gate spikes during fast commutations in half-bridge topologies. Both configurations provide high flexibility and bill of material reduction for external components.
High voltage rail up to 1200 V
Driver current capability: 4 A sink/source @25°C
dV/dt transient immunity ±100 V/ns in full temperature range
Overall input-output propagation delay: 75 ns
Separate sink and source option for easy gate driving configuration
4 A Miller CLAMP dedicated pin option
UVLO function
Gate driving voltage up to 26 V
3.3 V, 5 V TTL/CMOS inputs with hysteresis
Temperature shut-down protection
Standby function
6 kV galvanic isolation
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