STMicroelectronics MOSFET Gate Driver, 18.5 A 3-Pin 30 V, TO-220
- RS-stocknr.:
- 193-5398
- Fabrikantnummer:
- STP21N90K5
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 212,75
(excl. BTW)
€ 257,45
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
Op voorraad
- 900 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 4,255 | € 212,75 |
| 100 - 200 | € 3,986 | € 199,30 |
| 250 - 450 | € 3,882 | € 194,10 |
| 500 - 950 | € 3,782 | € 189,10 |
| 1000 + | € 3,688 | € 184,40 |
*prijsindicatie
- RS-stocknr.:
- 193-5398
- Fabrikantnummer:
- STP21N90K5
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Output Current | 18.5A | |
| Pin Count | 3 | |
| Fall Time | 40ns | |
| Package Type | TO-220 | |
| Driver Type | MOSFET | |
| Rise Time | 27ns | |
| Minimum Supply Voltage | 3V | |
| Maximum Supply Voltage | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 34.95mm | |
| Length | 15.75mm | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Mount Type | Through Hole | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Output Current 18.5A | ||
Pin Count 3 | ||
Fall Time 40ns | ||
Package Type TO-220 | ||
Driver Type MOSFET | ||
Rise Time 27ns | ||
Minimum Supply Voltage 3V | ||
Maximum Supply Voltage 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 34.95mm | ||
Length 15.75mm | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Mount Type Through Hole | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
TO-220 RDS(on)
Ultra low gate charge
Zener-protected
Gerelateerde Links
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