STMicroelectronics VNB14NV04TR-E MOSFET Gate Driver 1, 20 A 2-Pin 40 V, TO-263
- RS-stocknr.:
- 190-6854
- Fabrikantnummer:
- VNB14NV04TR-E
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 13,44
(excl. BTW)
€ 16,26
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 75,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,688 | € 13,44 |
| 25 - 45 | € 2,53 | € 12,65 |
| 50 - 120 | € 2,396 | € 11,98 |
| 125 - 245 | € 2,256 | € 11,28 |
| 250 + | € 2,152 | € 10,76 |
*prijsindicatie
- RS-stocknr.:
- 190-6854
- Fabrikantnummer:
- VNB14NV04TR-E
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | General Purpose Driver | |
| Output Current | 20A | |
| Pin Count | 2 | |
| Fall Time | 30μs | |
| Package Type | TO-263 | |
| Driver Type | MOSFET | |
| Number of Outputs | 5 | |
| Rise Time | 30μs | |
| Minimum Supply Voltage | 40V | |
| Maximum Supply Voltage | 40V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.35 mm | |
| Length | 10.4mm | |
| Height | 4.6mm | |
| Standards/Approvals | No | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type General Purpose Driver | ||
Output Current 20A | ||
Pin Count 2 | ||
Fall Time 30μs | ||
Package Type TO-263 | ||
Driver Type MOSFET | ||
Number of Outputs 5 | ||
Rise Time 30μs | ||
Minimum Supply Voltage 40V | ||
Maximum Supply Voltage 40V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Width 9.35 mm | ||
Length 10.4mm | ||
Height 4.6mm | ||
Standards/Approvals No | ||
Mount Type Surface | ||
Automotive Standard No | ||
The STMicroelectronics VNB10N07 are monolithic device made using VI Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. It built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
ESD protection
Direct Access to the gate of the power MOSFET
Linear current limitation
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