Infineon 256 kB Serial-SPI Serial (SPI) F-RAM 8-Pin SOIC
- RS-stocknr.:
- 273-7389
- Fabrikantnummer:
- FM25V02A-G
- Fabrikant:
- Infineon
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*prijsindicatie
- RS-stocknr.:
- 273-7389
- Fabrikantnummer:
- FM25V02A-G
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 256kB | |
| Product Type | Serial (SPI) F-RAM | |
| Organisation | 32k x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 40MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Automotive Standard | No | |
| Maximum Supply Voltage | 3.6V | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 2V | |
| Number of Words | 32k | |
| Minimum Operating Temperature | -40°C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 256kB | ||
Product Type Serial (SPI) F-RAM | ||
Organisation 32k x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 40MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Automotive Standard No | ||
Maximum Supply Voltage 3.6V | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 2V | ||
Number of Words 32k | ||
Minimum Operating Temperature -40°C | ||
The Infineon FRAM is a 256 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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