Infineon 16 kB Serial-SPI FRAM 8-Pin SOIC-8, CY15B016Q-SXE
- RS-stocknr.:
- 273-7315
- Fabrikantnummer:
- CY15B016Q-SXE
- Fabrikant:
- Infineon
Ontvang bulkkorting
Voeg 10 meer toe om 9% te besparen
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 6,82
(excl. BTW)
€ 8,26
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
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- Plus verzending 442 stuk(s) vanaf 07 november 2026
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Aantal stuks | Per stuk | Per verpakking* | Bespaar |
|---|---|---|---|
| 2 - 8 | € 3,41 | € 6,82 | - |
| 10 - 18 | € 3,07 | € 6,14 | 9% |
| 20 + | € 2,97 | € 5,94 | 12% |
*prijsindicatie
- RS-stocknr.:
- 273-7315
- Fabrikantnummer:
- CY15B016Q-SXE
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | FRAM | |
| Memory Size | 16kB | |
| Organisation | 2K x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 16MHz | |
| Package Type | SOIC-8 | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 125°C | |
| Automotive Standard | AEC-Q100 Grade 1 | |
| Maximum Supply Voltage | 3.6V | |
| Number of Words | 2k | |
| Minimum Supply Voltage | 3V | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type FRAM | ||
Memory Size 16kB | ||
Organisation 2K x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 16MHz | ||
Package Type SOIC-8 | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 125°C | ||
Automotive Standard AEC-Q100 Grade 1 | ||
Maximum Supply Voltage 3.6V | ||
Number of Words 2k | ||
Minimum Supply Voltage 3V | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
The Infineon FRAM is a 16 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non volatile memories.
RoHS compliant
Low voltage operation
Low power consumption
AEC Q100 Grade 1 compliant
Sophisticated write protection scheme
Software protection using write disable instruction
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